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    • 专利摘要:
    The invention relates to a pixelated filter (36) intended to rest on a support (32) and comprising, in a stacking direction: first filter pixels (PFIRCUT) each comprising a first interference filter (IRCUT) covered with a first dielectric block (46); and second filter pixels (PFIRBP) each comprising a second dielectric block (48), the thickness of which is greater than or equal to the thickness of the first interference filter, covered with a second interference filter (IRBP), including the thickness is less than or equal to the thickness of the first dielectric block, in which, for at least one of the second filter pixels, the second dielectric block of the second filter pixel is interposed between the first interference filters of the first two pixels filter and the second interference filter of the second filter pixel is interposed between the first dielectric blocks of the first two filter pixels.
    公开号:FR3082322A1
    申请号:FR1800585
    申请日:2018-06-08
    公开日:2019-12-13
    发明作者:Laurent Frey；Lilian Masarotto
    申请人:Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    IMAGE SENSORS INCLUDING AN INTERFERENTIAL FILTER MATRIX
    Field
    The present application relates to an interference filter, in particular for an image sensor, and to a method of manufacturing such an interference filter.
    Presentation of 1 1 prior art
    It is known to produce matrices of interference filters, in particular for image sensors, also called imagers, in the visible, infrared domain (in particular for wavelengths from 650 nm to 1050 nm ) and / or ultraviolet, which require the separation of several frequency ranges. Such a filter matrix is also called a pixelated filter, a filter pixel, or elementary filter, corresponding to the smallest element of the filter having the same filtering properties.
    An example of application of a pixelated filter corresponds to a device comprising a sensor adapted to acquire color images and infrared images. The pixelated filter can then include first filter pixels allowing visible light to pass through and blocking infrared radiation and second filter pixels allowing radiation to pass through
    B16955 - DD18653 JB infrared, especially near infrared, and blocking visible light.
    An interference filter is produced by a stack of several layers. As an example, an interference filter may comprise a stack of semi-reflective metallic layers separated by dielectric layers and / or an alternation of dielectric layers having different refractive indices, also called optical indices below. The thicknesses of the filter layers depend on the desired filtering properties.
    The production of a pixelated filter requires the production of dielectric layers having different thicknesses depending on the filter pixel considered.
    An example of a process for manufacturing a pixelated filter is described in the document WO2015195123 and implements a process by detachment (in English lift-off). A drawback of such a method is that it requires spacers, or transition zones, between neighboring filter pixels of approximately twice the total thickness of the filter. Such a method cannot therefore be implemented with arrays of adjacent pixels and of small size, typically 3 μm-5 μm. Indeed, the total thickness of the multilayer filters is at least 1 μm to 2 μm in order to obtain sufficiently selective spectral responses in color and infrared imaging applications.
    A drawback is that if part of the light reaches the transition zones, this results in a loss of signal by diffusion and / or a distortion of the spectral responses of the filter pixels. These losses can become significant 1 / ovoofim 1 ο Ί o vz-yz-m tv * n œn nr n V'r vr F ζ-χ <γ · 4- 4 1 ο, v v-—> vw-χ _L .d _Ld J_ LJ d LAJ_ 0.0 O d O ddd LU. J_ O il COL £ _> dd 1 idLJ _L LJ CQC _1_ d pCiL i.O.jjpd'J-L to the lateral dimension, or size, of the filter pixel. This can in particular occur in the case of small filter pixels, the lateral dimension of which is less than 2 μm, even when the layers of the interference filter have a thickness of a few hundred nanometers. This can also happen for larger filter pixels, whose side dimension is
    B16955 - DD18653 JB greater than 2 µm, with layers of the interference filter having a thickness of a few micrometers.
    summary
    An object of an embodiment is to overcome all or part of the drawbacks of interference filters and their manufacturing methods described above.
    Another object of an embodiment is that the lateral dimensions of the spacers of the interference filter are reduced, or even that the interference filter does not include a spacer between the filter pixels.
    Another object of an embodiment is the production of a pixelated interference filter with a filter pixel size of less than 5 pm, preferably between 3 pm and 4 pm, more preferably between 1.5 pm and 3 pm.
    Thus, one embodiment provides a pixelated filter intended to rest on a support and comprising, in a stacking direction:
    first filter pixels each comprising a first interference filter covered with a first dielectric block; and second filter pixels each comprising a second dielectric block, the thickness of which is greater than or equal to the thickness of the first interference filter, covered with a second interference filter, the thickness of which is less than or equal to the thickness of the first dielectric block, in which, for at least one of the second filter pixels, the second dielectric block of the second filter pixel __4- __Ί Λ -CI 1 4 - v r. 4 -vx 4— O - ^^ - ^ 4- -! 1
    L J-liLCt LpUbC CllLie 1CÜ dLL-LC _L O J_ J_ _L U J_ C O J_11 LC J_ J_C J- Cl 1 L ± C J_O kACJClZS. first filter pixels and the second interference filter of the second filter pixel is interposed between the first dielectric blocks of the first two filter pixels, the pixelated filter comprising, between each pair of adjacent first and second filter pixels, a transition zone of which the minimum dimension between the first pixel of
    B16955 - DD18653 JB filter and the second filter pixel of said pair, perpendicular to the stacking direction, is less than 500 nm, and in which the pixelated filter comprises first and second opposite faces, the first face being in contact with the support and the second face being substantially flat.
    According to one embodiment, each first interference filter comprises an alternation of first dielectric layers of a first dielectric material having a first refractive index in the visible range and of second dielectric layers of a second dielectric material having a second refractive index in the visible range strictly lower than the first refractive index and each second interference filter comprises an alternation of third dielectric layers of a third dielectric material having a third refractive index in the infrared domain and of fourth dielectric layers of a fourth dielectric material having a fourth refractive index in the infrared range strictly less than the third refractive index or each first interference filter comprises an alternation of the third dielectric layers and of the fourth dielectric layers e t wherein each second interference filter comprises alternating first dielectric layers and second dielectric layers.
    According to one embodiment, the first dielectric material can be chosen from the group comprising silicon nitride (SiN), hafnium oxide (HfO x ), aluminum oxide and nitride alloy
    -> Ί Ί 4 <4 "-, Ί 1 -im 4 4 -, ™ / 7 Ί ΆΊ
    GJ.-L.-L-LGÀ'J ^ Κ_4. Cl-LUULl-Lll-LUULL ^ _4. y u. GXZ-kjl-'C! H _L y) j l_4.ll silicon, oxygen, carbon and nitrogen (SiO x CyN z ), silicon (SiN x ), niobium oxide (NbO x ), tantalum oxide (TaO x ), titanium oxide (TiO x ) and mixtures of at least two of these compounds.
    According to one embodiment, the second dielectric material and / or the fourth dielectric material can be
    B16955 - DD18653 JB each chosen from the group comprising silicon dioxide (SiC> 2), magnesium fluoride (MgF2), silicon oxide (SiO x ), silicon oxynitride (SiO x Ny), l hafnium oxide (HfO x ), aluminum oxide (A10 x ), a film based on aluminum, oxygen and nitrogen (A10 x Ny), a film based on silicon, d oxygen, carbon and nitrogen (SiO x CyN z ), silicon nitride (SiN x ) and mixtures of at least two of these compounds.
    According to one embodiment, the third dielectric material can be chosen from the group comprising amorphous silicon (aSi), hydrogenated amorphous silicon (aSiH) and mixtures of these compounds.
    One embodiment also provides an image sensor comprising a support and the pixelated filter as defined above resting on the support.
    According to one embodiment, the sensor further comprises an anti-reflective layer between the support and the pixelated filter.
    According to one embodiment, the sensor comprises, for each first filter pixel and covering said first filter pixel, at least one color filter adapted to let visible light pass only in a first wavelength range and a color filter adapted to let visible light pass only in a second range of wavelengths different from the first range.
    According to one embodiment, the sensor comprises, for each color filter of each first filter pixel, a first lens covering said color filter, and comprises, for each second filter pixel, a second lens covering the second filter pixel.
    One embodiment provides a method of manufacturing an interference filter as defined above, comprising the following successive steps:
    a) depositing, on a substrate, a first stack of dielectric layers having the structure of the first interference filters;
    B16955 - DD18653 JB
    b) etching the first stack to remove the first stack at the locations of the second filter pixels and to keep the first interference filters at the locations of the first filter pixels;
    c) depositing a first insulating layer, having a thickness greater than the thickness of the first stack, on the first interference filters and between the first interference filters;
    d) etching at least part of the first insulating layer on the first interference filters;
    e) depositing a second stack of dielectric layers having the structure of the second interference filters;
    f) etching the second stack to remove the second stack at the locations of the first filter pixels and to keep the second interference filters at the locations of the second filter pixels;
    g) depositing a second insulating layer, having a thickness greater than the thickness of the second stack, on the second interference filters and between the second interference filters; and
    h) etching of at least part of the second insulating layer on the second interference filters.
    According to one embodiment, in step a), the first stack is deposited on a support comprising at least one raised area, the method comprising, in step b), the etching of the part of the first stack covering the relief area.
    According to one embodiment, the etching of the first insulating layer and / or of the second insulating layer comprises a mechanical-chemical polishing step.
    Brief description of the drawings
    These characteristics and advantages, as well as others, will be explained in detail in the following description of particular embodiments made without implied limitation in relation to the attached figures, among which:
    B16955 - DD18653 JB FIGS. 1 and 2 are respectively a sectional view and a top view, partial and schematic, of an embodiment of an optoelectronic device comprising an interference filter;
    FIGS. 3 to 6 each represent, in the left part, a map of the module of the Poynting vector in a sectional view of an optoelectronic device comprising a filter pixel and, in the right part, an evolution curve of the transmission of the filter pixel as a function of wavelength for different structures of filter pixels and microlenses;
    FIG. 7 represents domains corresponding to acceptable structures of filter pixels as a function of the radius of curvature of the lens covering the filter pixel and of the distance between the support on which the filter pixel rests and the lens;
    Figures 8 and 9 are sectional views, partial and schematic, of other embodiments of an interference filter;
    the / Figures 10A to 10H are sectional views, partial and schematic, of structures obtained in successive stages of an embodiment of a method of manufacturing the optoelectronic device shown in Figures 1 and 2;
    Figures 11A to 11D are sectional views, partial and schematic, of structures obtained in successive stages of an unsatisfactory method of manufacturing the optoelectronic device shown in Figures 1 and 2 in the presence of reliefs;
    FIGS. 12A to 12K are partial and schematic sectional views of structures obtained in successive stages of an embodiment of a method for manufacturing the optoelectronic device shown in FIGS. 1 and 2 in the presence of reliefs;
    B16955 - DD18653 JB Figures 13 to 17 are sectional views, partial and schematic, of other embodiments of an optoelectronic device comprising an interference filter;
    Figure 18 is a partial and schematic top view of the optoelectronic device shown in Figures 16 or 17; and FIGS. 19 to 21 are sectional views, partial and schematic, of other embodiments of an optoelectronic device comprising an interference filter. detailed description
    For the sake of clarity, the same elements have been designated by the same references in the different figures and, moreover, as is usual in the representation of electronic circuits, the various figures are not drawn to scale. In addition, only the elements useful for understanding this description have been shown and are described. In particular, the means for processing the signals supplied by the sensors described below are within the reach of those skilled in the art and are not described. In the following description, unless indicated otherwise, the terms approximately, substantially, approximately and of the order of mean to the nearest 10%, preferably to the nearest 5%. In addition, a substantially planar surface is a surface having no raised or depressed areas having a thickness greater than 500 nm relative to the mean plane of the surface. In addition, in the following description, the size or lateral dimension of an element of a sensor is called the maximum dimension of this element in a plane perpendicular to the stacking direction of the layers forming the sensor.
    In the following description, the refractive index of the material means the refractive index of the material over the operating wavelength range of the interference filter in the case where the refractive index of the material is substantially constant over the operating wavelength range of the interference filter, or means the index of
    B16955 - DD18653 JB average refraction of the material over the operating wavelength range of the interference filter in the case where the refractive index of the material varies over the operating wavelength range of the interference filter. In addition, in the following description, a homogeneous layer made of a single material, for example an organic resin, is called color filter, having spectral filtering properties by selective absorption of light in the volume of the material. In addition, radiation called whose visible lengths is between approximately 400 nm and approximately 700 nm is called visible light or visible domain.
    In the following description, the transition zone or spacer between two adjacent filter pixels of the pixelated filter is called the region between the two filter pixels in which the performance of the pixelated filter cannot be guaranteed due to manufacturing uncertainties. , essentially the misalignment during lithography steps and the inclination of the flanks resulting from an etching step. In particular, the transition zone may include an overlap zone of two interference filters, an zone without an interference filter if the interference filters are slightly spaced, and / or the unusable edges of each interference filter, which may include faces which are not entirely done vertical.
    Figures 1 and 2 show an embodiment of an optoelectronic device 30 corresponding to an image sensor, Figure 1 being a section of Figure 2 along the line Ά-Ά. The optoelectronic device 30 comprises a support 32, for example made of silicon, a monolayer or antireflection multilayer structure 34 covering the upper face 33 of the support 32 and a pixelated interference filter 36 resting on the antireflection layer 34.
    The support 32 can comprise photon or photodetector PH sensors, represented very schematically in FIG. 1 by dotted squares. The optoelectronic device 30 can also comprise colored filters,
    B16955 - DD18653 JB in particular red filters R, green filters G, blue filters B, and infrared filters IR, based on the pixelated interference filter 36. The optoelectronic device 30 can also comprise lenses 38, shown only on the Figure 1, covering the color filters R, G, B, IR.
    In the present embodiment, the interference filter 36 comprises first and second filter pixels PF IRBP and PF IRCUT .
    In the present embodiment, each first pixel of filter PFi R cqt comprises from bottom to top in FIG. 1:
    optionally a dielectric layer 40;
    a first IRCUT interference filter having a thickness ey and comprising alternating layers 42 of a first dielectric material having a high refractive index η Η1 and do layers 44 of a second dielectric material having a low refractive index n B y, strictly lower than the refractive index n R q, the layers 42 may not have the same thicknesses and the layers 44 may not have the same thicknesses; and a dielectric block 46, which can have a monolayer or multilayer structure.
    In the present embodiment, each second filter pixel PFq RB p comprises from bottom to top in FIG. 1:
    a dielectric block 48 having a thickness greater than or equal to the thickness eq, the block 48 possibly having a monolayer or multilayer structure;
    a second IRBP interference filter having a thickness e2 less than or equal to the thickness of the block 46 and comprising an alternation of layers 50 of a third dielectric material having a high refractive index n R 2 and of layers 52 of a fourth material dielectric having a low refractive index n R 2z strictly lower than the refractive index n R 2z the layers 50 which may not have the same thicknesses and the layers 52 which may not have the same thicknesses; and
    B16955 - DD18653 JB possibly a dielectric layer 54.
    According to one embodiment, the second and fourth materials are identical. The dielectric layer 40 is made of a fifth dielectric material. The dielectric block 46 is made of at least a sixth dielectric material. The dielectric block 48 is made of at least a seventh dielectric material. The dielectric layer 54 is made of an eighth dielectric material. In the embodiment represented in FIG. 1, the fifth, sixth, seventh and eighth dielectric materials are identical to the material of low refractive index of the interference filters IRCUT and IRBP, that is to say identical to the second and fourth materials . For this reason, in the figures, the dielectric layers with a low refractive index are not shown separately. Alternatively, the fifth, sixth, seventh and / or eighth dielectric materials may be different from the second and fourth materials. However, preferably, the fifth, sixth, seventh and / or eighth dielectric materials are made of a material or materials of refractive index close to the material of low refractive index of the interference filters IRCUT and IRBP with an index difference of refraction less than 0.1.
    According to one embodiment, the first PFircuT filter pixels transmit visible light and do not substantially transmit infrared radiation for wavelengths greater than a threshold between 630 nm and 750 nm. According to one embodiment, the second PFlRBP filter pixels essentially transmit infrared radiation in a single range of wavelengths whose width is between 10 nm and 100 nm.
    The dielectric layers 42, 44, 50, 52 of the IRCUT and IRBP filters are substantially planar. Preferably, the IRCUT and IRBP filters do not include spacers.
    PH photodetectors can be adapted to detect radiation in different wavelength ranges
    B16955 - DD18653 JB or be adapted to detect radiation in the same wavelength range. In the latter case, it is only the presence of the filter pixels PFircuT PFjrbp and the colored filters R, G, B and IR which allows the detection of radiation in different wavelength ranges. Each filter pixel can then cover at least one photodetector of the sensor and play the role of a bandpass filter of the incident radiation which reaches the sensor to provide radiation adapted to the range of wavelengths detected by the associated photodetector. The lateral dimensions of the filter pixels may be substantially equal to the lateral dimensions of the photosites of the image sensor or equal to a multiple of the lateral dimensions of the photosites of the image sensor. The arrangement of filter pixels and colored filters can follow that of the photosites of the image sensor. For example, the filter pixels and the colored filters can be arranged in a square as shown in FIG. 2. The interference filter 36 can in particular be used with image sensors whose photosites have a size less than 5 pm. The image sensor can be a color and infrared sensor.
    According to one embodiment, each first filter pixel PFjrcut is covered by at least two colored filters among the filters R, G, B allowing visible light to pass through in different wavelength ranges. According to one embodiment, each second filter pixel PFjpgp is covered by a single colored IR filter letting the infrared radiation pass. According to one embodiment, the optoelectronic device 30 comprises first color filters R covering the first pixel filter PFppcUT and 'F or visible light, passing only wavelengths in the red, particularly including wavelengths between 580 nm and 700 nm. According to one embodiment, the optoelectronic device 30 comprises second colored filters G covering the first filter pixels ΡΡχρρυτ for visible light, allowing only the wavelengths to pass through.
    B16955 - DD18653 JB green, in particular the wavelengths between 470 nm and 590 nm. According to one embodiment, the optoelectronic device 30 comprises third colored filters B covering the first filter pixels PFqRCUT e t, for visible light, allowing only the wavelengths to pass in blue, in particular the wavelengths between 380 nm and 500 nm. According to one embodiment, the optoelectronic device 30 comprises fourth IR color filters covering the second filter pixels PFjr B r not allowing visible light to pass through, and in particular allowing radiation of wavelengths between 750 nm and 3000 to pass through nm.
    The thicknesses eq and ey can be between 0.5 µm and 4 µm, preferably between 1 µm and 3 µm.
    According to one embodiment, the first dielectric material is transparent, that is to say with an extinction coefficient of less than 5.10 -3 , in the visible and near infrared range. According to one embodiment, the second dielectric material is transparent, that is to say with an extinction coefficient of less than 5.10 -3 , in the visible and near infrared range. According to one embodiment, the third dielectric material is transparent, that is to say with an extinction coefficient of less than 5.10 3 , in the visible and near infrared range.
    The refractive index n H q can be between 1.8 and 2.5. The refractive index n B q or n B 2 can be between
    1.3 and 2.5. The refractive index n H y can be between
    1.8 and 4.5.
    The first dielectric material can be chosen from the group comprising silicon nitride (SiN), hafnium oxide (HfO x ), aluminum oxide (A10 x ), an aluminum alloy, oxygen and nitrogen (AlO x Ny), an alloy of silicon, oxygen, carbon and nitrogen (SiO x CyN z ), silicon nitride (SiN x ), niobium oxide (NbO x ) , tantalum oxide (TaO x ), titanium oxide (TiO x ) and mixtures of at least two of these compounds.
    B16955 - DD18653 JB
    The second dielectric material and the fourth dielectric material can each be chosen from the group comprising silicon dioxide (S1O2), magnesium fluoride (MgF2), silicon oxide (SiO x ), silicon oxynitride (SiO x Ny), hafnium oxide (HfO x ), aluminum oxide (A1O X ), a film based on aluminum, oxygen and nitrogen (A10 x Ny), a film with silicon, oxygen, carbon and nitrogen (SiO x CyN z ), silicon nitride (SiN x ) and mixtures of at least two of these compounds.
    The third dielectric material can be chosen from the group comprising amorphous silicon (aSi), hydrogenated amorphous silicon (aSiH) and mixtures of these compounds.
    Advantageously, the pixelated filter comprises, between each pair of first and second adjacent filter pixels, a transition zone whose minimum dimension between the first filter pixel PFjrcut and the second filter pixel PFirbp of said pair, perpendicular to the stacking direction of the device, is less than 500 nm.
    FIG. 3 represents, in the left part, a grayscale heat map of the Poynting vector module which represents the flow of electromagnetic energy in a sectional view of a part of the optoelectronic device 30 in the case where the pixel PFpppp filter element includes only the dielectric block 48 between the silicon support 32 and the lens 38. FIG. 3 represents, on the right side, a curve of evolution of the transmission of radiation by the structure comprising the filter pixel and the lens depending on the wavelength. For a photosite having, in top view, a square shape of 4 µm side and having an active area for collecting incident radiation of square shape of 2 µm side, an efficient collection of incident radiation is obtained in the active area when the thickness of the dielectric block 48 is of the order of
    2.5 µm and the radius of curvature of lens 38 is 2 µm. It appears that the lens 38 focuses the light approximately at the surface of the support 32 of
    B16955 - DD18653 JB silicon. The transmission varies little as a function of the wavelength and is around 75%.
    Figure 4 is a figure similar to Figure 3 in the case where the interference filter IRBP of the filter pixel PFgRBP is arranged halfway between the support 32 and the lens 38, the distance between the support 32 and the lens 38 being equal to 2.5 μm and the radius of curvature of the lens 38 being equal to 2 μm. We can observe a filtering of the wavelengths with nevertheless a reduction of the maximum transmission compared to the case represented in figure 3. In addition, the spectral selectivity obtained is relatively poor with for example a non negligible transmission towards 1000 nm.
    FIG. 5 is a figure analogous to FIG. 4 in the case where the interference filter IRBP of the filter pixel PFjrbp is provided between the support 32 and the lens 38, the difference between the support 32 and the lens 38 being equal to 5 pm and the radius of curvature of the lens 38 being equal to 2.5 pm. It appears an increase in the maximum transmission of the structure at the wavelengths of interest compared to FIG. 4 when the IRBP interference filter is present but the difference between the support 32 and the lens 38 is 2.5 pm. The maximum transmission is close to the case where there is no IRBP interference filter and where the difference between the support 32 and the lens 38 is
    2.5 pm. The effect is obtained independently of the difference between the IRBP interference filter and the support 32.
    FIG. 6 is a figure analogous to FIG. 4 when the filter pixel PF ^ pgp comprises only the dielectric block 48 between the support 32 and the lens 38, the difference between the support 32 and the lens 38 being equal to 5 μm and the radius of curvature of the lens 38 being equal to 2.5 μm. The transmission varies little as a function of the wavelength and is of the order of 65%, that is to say less than the case illustrated in FIG. 3. Compared to FIG. 5, it surprisingly appears that the transmission at wavelengths of interest when the interference filter
    B16955 - DD18653 JB
    IRBP is present is more important than when the IRBP filter is absent.
    FIG. 7 represents the optimal operating points (cross CO, Cl and C2) and the ranges of optimal values for the radius of curvature and the distance between support 32 and lens 38, for a filter pixel not comprising an interference filter ( surface S0), in the case of a filter pixel PF IRB p (surface SI) and in the case of a filter pixel PF IR c UT (surface S2). FIG. 7 was obtained for a photosite having, in top view, a square shape of 4 μm side with a filling factor, which corresponds to the ratio between the surface of the active region of the photosite and the surface of the photosite, 25% for a photosite associated with the second pixel of filter PFq RB p and 55% for a photosite associated with the first pixel of filter pf IRCUT ·
    It is clear that the operating ranges are significantly different between the configurations with and without an interference filter.
    In the embodiment shown in FIGS. 1 and 2, a dielectric layer of the material with a low refractive index is present, in the stacking direction, between the top of the IRCUT interference filter of the filter pixel PFj R qut and base of the IRBP interference filter of the filter pixel PFppgp.
    FIG. 8 partially represents a variant of the optoelectronic device 30 in which, according to the stacking direction, the top of the interference filter IRCUT of the filter pixel PFppcUT is flush with the base of the interference filter IRBP of the filter pixel PFq R pp .
    FIG. 9 represents another variant of the optoelectronic device 30 in which, in the stacking direction, a dielectric layer 54, of a ninth material, different from the first, second, third and fourth material, is present between the top of the filter IRCUT interference of the filter pixel PF IRCU t and the base of the IRBP interference filter of the filter pixel PFq RB p. As will be described in more detail
    B16955 - DD18653 JB thereafter, the layer 54 can serve as an etching stop layer during the formation of the IRBP interference filter.
    FIGS. 10A to 10H are sectional views, partial and schematic, of structures obtained in successive stages of an embodiment of a method for manufacturing the optoelectronic device 30 represented in FIGS. 1 and 2. In these figures, layers 34 and 40 are not shown.
    FIG. 10A represents the structure obtained after the deposition of a first stack 58 of dielectric layers having the desired structure of IRCUT interference filters on the whole of the upper face 33 of the support 32, the layers 34 and 40 not being shown.
    FIG. 10B represents the structure obtained after the etching of the first stack 58 at the desired locations of the second filter pixels so as to keep IRCUT filters only at the locations of the first filter pixels PF IRCUT ·
    FIG. 10C represents the structure obtained after the deposition of a dielectric layer 60, of the material composing the blocks 48, on the first IRCUT interference filters and on the support 32 between the first IRCUT interference filters. The thickness of the dielectric layer 60 is greater than or equal to the thickness of the first IRCUT interference filters.
    FIG. 10D represents the structure obtained after a planarization step, for example a chemical mechanical polishing (CMP, English acronym for Chemical-Mechanical Planarization), which results in the removal of the dielectric layer 60 on the first IRCUT interference filters so as not to preserve as the blocks 48 of the second filter pixels PFgpBp. In the present embodiment, the last layer at the top of the IRCUT interference filters can act as a stop layer for the planarization step.
    FIG. 10E represents the structure obtained after the deposition, on the whole of the structure obtained in the previous step, of a second stack 62 of dielectric layers
    B16955 - DD18653 JB having the desired structure of IRBP interference filters. In particular, the second stack 62 covers the IRCUT interference filters and the blocks 48.
    FIG. 10F shows the structure obtained after an etching step of the parts of the stack 62 covering the IRCUT interference filters so as to keep only the IRBP interference filters resting on the blocks 48.
    FIG. 10G represents the structure obtained after the deposition of a dielectric layer 64, of the material making up the blocks 46, on the whole of the structure obtained in the previous step, in particular on the IRCUT interference filters and on the IRBP interference filters . The thickness of the dielectric layer 64 is greater than or equal to the thickness of the second IRBP interference filters.
    FIG. 10H represents the structure obtained after a planarization step, for example a CMP, which results in the removal of the dielectric layer 64 on the IRBP interference filters in order to keep only the blocks 46 of the first filter pixels PFjrcuT · In this mode In one embodiment, the last layer at the top of the IRBP interference filters can act as a stop layer for the planarization step.
    The embodiment of the manufacturing method described above is particularly suitable for the case where the upper face 33 of the support 32 is substantially planar. However, the upper face 33 of the support 32 may include raised areas. This is particularly the case when the support 32 corresponds to the rear face of an electronic circuit manufactured using CMOS technology. The raised areas may in particular correspond to the periphery of contact pads and have a transverse dimension of the order of a few micrometers.
    FIGS. 11A to 11D are partial and schematic sectional views of structures obtained at successive stages of a process for manufacturing the optoelectronic device 30
    B16955 - DD18653 JB shown in Figures 1 and 2 in the case where the support 32 has raised areas.
    FIG. 11A represents the structure obtained after a step similar to that described above in relation to FIG. 10A and comprising the deposition of the first stack 58 on the upper surface 33 of the support 32. It is noted that, in the present embodiment, the support 32 includes raised areas 70 relative to the base plane of surface 33. By way of example the raised areas 70 may have a thickness of the order of 1 μm relative to the base plane of surface 33 The raised areas 70 are not intended to be covered by filter pixels. However, the stack 58 covers the raised areas 70, which results in raised areas 72 on the parts of the stack 58 covering the raised areas 70.
    FIG. 11B represents the structure obtained after a step similar to that described above in relation to FIG. 10B comprising the etching of the stack 58 in particular to form the first IRCUT interference filters.
    FIG. 11C represents the structure obtained after a step similar to that described previously in relation to FIG. 10C and comprising the deposition of the dielectric layer 60 on the whole of the structure formed in the previous step and in particular on the raised areas 72.
    FIG. 11D represents the structure obtained after a planarization step similar to that described previously in relation to FIG. 10D. In the present embodiment, the planarization step is continued until it reaches the top of the stack 58 outside of the raised areas 72. This results in the etching of the raised areas 72. A drawback is that the areas in relief 72 comprise vertical or inclined lateral spacers having a multilayer structure. When planarization, in particular by CMP, reaches these spacers, it is possible to have tearing off of large pieces which will disperse over the entire structure and render the structure unusable.
    B16955 - DD18653 JB
    It is then possible that the process cannot be continued due to the defects generated in the planarization step on spacers with inclined multilayer structures.
    FIGS. 12A to 12K represent the structures obtained at successive stages of a variant of the embodiment of the method described above in relation to FIGS. 10A to 10H for the manufacture of the electronic device shown in FIGS. 1 and 2, this variant being adapted to the case where the support 32 comprises relief zones whose height relative to the base plane of the support 32 is less than the thickness of the first IRCUT interference filters.
    FIG. 12A represents the structure obtained after a step similar to the step described previously in relation to FIG. 11A with the difference that a dielectric layer 74 is interposed between the stack 58 and the support 32. The insulating layer 74 has the same thickness and composition as layer 4 0.
    FIG. 12B represents the structure obtained after a step similar to the step described previously in relation to FIG. 11B and comprising the etching of the stack 58 and of part of the dielectric layer 74, both at the desired locations of the second filter pixels PFjrbr, and on the raised areas 70. This makes it possible to delimit the IRCUT interference filters and the layers 40 for each filter pixel PF ^ rqu ^. The dielectric layer 74 makes it possible to produce an over-etching while avoiding an undesirable attack of the anti-reflection layer 34 during the removal of the stack 58. In FIG. 12B, an etching of the stack 58 is also carried out in an area 76 which can be used at a later stage to carry out metrological verification operations.
    FIG. 12C represents the structure obtained after a step analogous to the step described previously in relation to FIG. 10C. The thickness of the dielectric layer 60 is greater than the thickness of the stack 58, for example
    B16955 - DD18653 JB of the order of 1.5 times the thickness of the stack 58, for example of the order of 3 μm.
    FIG. 12D represents the structure obtained after an at least partial etching step of the parts of the layer 60 covering the IRCUT interference filters and covering the raised areas 70. This step can include a photolithography step using the mask complementary to the mask used for etching the stack 58 in the step described above in relation to FIG. 12B. This etching step of the layer 60 may not be present.
    FIG. 12E represents the structure obtained after a planarization step, for example by CMP, analogous to the step described previously in relation to FIG. 10D. Preferably, the last layer deposited from the stack 58 corresponds to a stop layer of the planarization step. When the step described previously in relation to FIG. 12D is present, it makes it possible to facilitate the planarization step by CMP. The planarization step makes it possible in particular to delimit the dielectric blocks 48 and an insulating block 77 at location 76. This step notably makes it possible to properly control the thickness of block 48 which is by this process substantially equal to that of the IRCUT interference filter at this stage of the process. Controlling the thickness of block 48 is important for good quality of the spectral response of the filter pixel PF IRBP .
    It may be advantageous for the planarization step of the layer 60 to be stopped on a stop layer rather than at the completion of a determined duration. Indeed, it can be difficult, with a stop of the planarization step at the end of a determined duration, to control the remaining thickness of the dielectric layer 60 with as much precision as when a stop of the planarization step on a barrier layer. In addition, this means that the stopping of the planarization step may not be uniform over the entire surface of the structure. In particular, there may be a dispersion of the thicknesses of the remaining part of the layer
    B16955 - DD18653 Dielectric JB 60 too large compared to the dimensional constraints for the proper functioning of the filter pixels. In addition, it can be difficult to reproduce exactly the same stop conditions from one optoelectronic device to another.
    FIG. 12F represents the structure obtained after a step analogous to the step described previously in relation to FIG. 10E with the difference that the step of depositing the stack 62 is preceded by a step of depositing a dielectric layer 78 on the entire structure obtained in the previous step, of the same material as layer 60 or of neighboring refractive index. The thickness of the layer 78 is well controlled because it results from a deposit. Therefore, in the present embodiment, the thickness of the dielectric block 48 is greater than the thickness of the IRCUT interference filter and chosen to optimize the transmission of the second IRBP interference filter deposited on the block 48.
    FIG. 12G represents the structure obtained after a step analogous to the step described previously in relation to FIG. 10F comprising the etching of the parts of the stack 62 and of all or part of the dielectric layer 78 covering the IRCUT interference filters and, in addition, covering the relief zones 72 and the dielectric block 77. Preferably, the last deposited layer of the stack 58 corresponds to an etching stop layer for the etching step of the dielectric layer 78. This step leads to the delimitation of the IRBP interference filters.
    FIG. 12H represents the structure obtained after a step analogous to the step described previously in relation to FIG. 10G. The thickness of layer 64 can be of the order of
    1.5 pm to 2.5 pm. This thickness is not critical for the performance of the optoelectronic device 30 provided that the index difference with the materials of the color filters deposited subsequently and the material making up the lenses deposited subsequently are small, preferably less than 0.2.
    B16955 - DD18653 JB
    FIG. 121 represents the structure obtained after an at least partial etching step of the parts of the layer 64 covering the IRBP interference filters and covering the raised areas 70. This step may include a photolithography step using the mask complementary to the mask used for the etching of the stack 62 in the step described previously in relation to FIG. 12G. This layer 64 etching step may not be present.
    FIG. 12J represents the structure obtained after a planarization step, for example by CMP, analogous to the step described previously in relation to FIG. 10H. According to one embodiment, the stopping of the planarization step can be carried out at the end of a determined period before reaching the IRBP interference filters. According to another embodiment, the last deposited layer of the stack 62 corresponds to a stop layer of the planarization step. When the step described previously in relation to FIG. 121 is present, it makes it possible to facilitate the planarization step by CMP. The planarization step makes it possible in particular to delimit the dielectric blocks 46 and the dielectric block 77 at location 76 and to facilitate the spreading of the resins during the formation of the colored filters R, G, B, IR.
    FIG. 12K represents the structure obtained after the formation of the colored filters R, G, B, IR and the lenses 38.
    Figure 13 is a sectional, partial and schematic view of another embodiment of an optoelectronic device 80 comprising all the elements of the optoelectronic device 30 shown in Figures 1 and 2 with the difference that the relative positions between the blocks 46, 48 and the interference filters IRCUT, IRBP, in the direction of stacking of the layers on the support 32, are reversed with respect to the optoelectronic device 30. For example, for each first filter pixel PFjrcUT ' I e dielectric block 4 6 is interposed between the support 32 and the interference filter IRCUT and, for each second pixel filter PF IRBP, the filter
    B16955 - DD18653 JB IRBP interference is interposed between the support 32 and the dielectric block 48. The IRCUT interference filter is therefore formed on the dielectric block 46 whose thickness is greater than or equal to that of the IRBP interference filter while IRBP interference filter is formed directly on the support 32 or on a thin dielectric layer. This can be advantageous insofar as the filter pixel PF IRB p can be more sensitive, from an optical performance point of view, to geometric dispersions and refractive indices than the filter pixel PFjrcut- As a result, the impact, in the optoelectronic device 80, of the thickness dispersion of the dielectric block 46 under the IRCUT interference filter on the optical response of the filter pixel PFjrcut es t therefore less than the impact, in the optoelectronic device 30, of the thickness dispersion of the dielectric block 48 under the interference filter IRBP on the optical response of the filter pixel PFqppp. However, in the present embodiment, it may be necessary to provide a specific etching stop layer at the top of the IRBP interference filter since the layer 50 of the third dielectric material having a high refractive index n B 2 at top of the IRBP interference filter may not be able to serve as an etch stop layer for the low refractive index material n B q of the IRCUT interference filter.
    FIG. 14 is a sectional, partial and schematic view of another embodiment of an optoelectronic device 85 in which the dielectric block 46 for each first filter pixel PFjrcut is composed of a self-planing resin. This advantageously makes it possible to simplify the process for manufacturing the optoelectronic device 85 compared to the optoelectronic device 30. In fact, the steps described above in relation to FIGS. 12H to 12J can be replaced by a single step of depositing the self-planing resin. According to one embodiment, the self-planing resin is made of a material which is substantially transparent to visible light and to infrared radiation. According to another mode
    B16955 - DD18653 JB, the self-planing resin is made of a material which is substantially transparent to visible light and substantially opaque to infrared radiation.
    In the embodiments described above, the IR color filter covering the second filter pixel PFgRBP is made of black resin. This colored filter advantageously makes it possible to block radiation at wavelengths less than about 800 nm and facilitates the design of the IRBP interference filter. However, according to another embodiment, the IR filter can be replaced by a resin at least partially transparent to visible light.
    In the embodiments described above, the lenses 38 have identical structures for all the color filters R, G, B, IR.
    Figure 15 is a sectional view, partial and schematic, of another embodiment of an optoelectronic device 90 in which the lenses 38 are of different shapes according to the color filters R, G, B, IR. By way of example, in FIG. 15, the lens associated with the thicker color filter IR has been shown than the lenses associated with the other color filters R, G and B. This makes it possible in particular to adapt to photodiodes having different characteristics (for example a larger IR pixel size or a different fill factor of the visible photodiodes) and / or to adapt to the spectral responses of the assembly comprising the filter pixel and the lens.
    The photodiodes covered by the filter pixels PFircut e ^ t P IRBP may have the same dimensions or have different dimensions. The first filter pixel PF IRCUT preferably covers as many photodiodes as there are different types of colored filters R, G and B allowing visible light to pass through. The second filter pixel can cover a single photodiode or at least two photodiodes.
    Figures 16 and 17 are sectional views, partial and schematic, of other embodiments of devices
    B16955 - DD18653 JB optoelectronics 95, 100. Figure 18 is a top view of the optoelectronic device 95, 100 shown in Figure 16 or 18. Figures 16 and 17 are sectional views of Figure 18 along line BB. For the optoelectronic device 95 shown in FIG. 16, each second filter pixel PFqpgp covers two photodiodes PH. For the optoelectronic device 100 shown in FIG. 17, each second filter pixel PF IRBP covers a photodiode PH 'of larger dimensions than the photodiodes PH associated with the first filter pixels pf IRCUT ·
    FIG. 19 is a sectional view of another embodiment of an optoelectronic device 105 in which the optoelectronic device 105 comprises all of the elements of the optoelectronic device 30 represented in FIGS. 1 and 2 and also comprises, a third filter pixel PFgy, for example adapted to filter ultraviolet radiation, covered with a filter T and a lens 38. In this case, the third filter pixel can comprise, on the support 32, an insulating block 106 of a dielectric material and a UV interference filter, comprising for example an alternation of metallic layers and dielectric layers, for example an alternation of silver or aluminum layers and dielectric layers. The colored filter T covering the third filter pixel PF UV can be made of transparent resin.
    FIG. 20 is a sectional view of another embodiment of an optoelectronic device 110 in which the optoelectronic device 110 comprises all of the elements of the optoelectronic device 30 represented in FIGS. 1 and 2 and further comprises, reflective walls 112 which extend over the entire thickness of the filter pixels PFqRCUT and PPlRBP and which separate the second filter pixels PF IRB p from the first filter pixels PF IRCUT and which, in addition, for each first filter pixel PFjrquT 'delimit a portion of the first filter pixel PFq R Quq opposite each color filter R, G, B. The walls 112 reflect visible light and the
    B16955 - DD18653 JB infrared radiation, especially near infrared radiation. The walls 112 may be metallic or comprise a metallic coating of thickness typically greater than 50 nm. This advantageously makes it possible to reduce the optical crosstalk of the optoelectronic device 110. The walls 112 can be produced after the steps of forming the filter pixels PF IRCUT and PF IRBP ·
    FIG. 21 is a sectional view of another embodiment of an optoelectronic device 115 in which the optoelectronic device 115 comprises all of the elements of the optoelectronic device 30 shown in FIGS. 1 and 2 and also comprises, for each first filter pixel pf IRCUT ' of the lenses 116 covering the interference filter IRCUT of the first filter pixel PF IRCUT r each lens 116 being interposed between the interference filter IRCUT and one of the colored filters R, G and B. The device optoelectronics 115 further comprises, for each second pixel of filter PF IRBP , a lens 118 covered by the interference filter IRBP of the second filter pixel PF IRBP , each lens 118 being interposed between the interference filter IRBP and the support 32. This allows to reduce the optical crosstalk of the optoelectronic device 115. These lenses 116, 118 are for example made of silicon nitride to ensure a sufficient refractive index contrast with the surrounding medium, for example an oxide, preferably a difference greater than 0.5. A planarization step of the oxide layer deposited above the lenses 116, 118 made of silicon nitride is preferably carried out before the production of the IRBP interference filters.
    Particular embodiments have been described. Various variants and modifications will appear to those skilled in the art. In particular, although, in the embodiments described above, each lens 38 is shown centered relative to the associated photodiode PH, it is clear that for certain applications, it is possible to offset each lens relative to the associated photodiode. In addition, in the modes of
    B16955 - DD18653 JB As described above, the manufacturing methods can be modified so that the IRCUT interference filters of the first PF IRCUT pixel filters vary as a function of the position of the PF IRCUT pixel filter in the optoelectronic device.
    Various embodiments with various variants have been described above. It is noted that a person skilled in the art can combine various elements of these various embodiments and variants without demonstrating inventive step. In particular, at least two of the embodiments of optoelectronic devices 80, 85, 90, 95, 100, 105, 110, 115 can be combined together.
    权利要求:
    Claims (12)
    [1" id="c-fr-0001]
    1. Pixelated interference filter (36) intended to rest on a support (32) and comprising, in a stacking direction:
    first filter pixels (PFirqjt) each comprising a first interference filter. (IRCUT) covered with a first dielectric block (46); and second filter pixels (PFiRBp) each comprising a second dielectric block (48), the thickness of which is greater than or equal to the thickness of the first interference filter 10, covered with a second interference filter (IRBP) f of which the thickness is less than or equal to the thickness of the first dielectric block, in which, for at least one of the second filter pixels, the second dielectric block of the second filter pixel 15 is interposed between the first interference filters of two first filter pixels and the second interference filter. of the second filter pixel is interposed between the first dielectric blocks of the first two filter pixels, the pixelated interference filter comprising, between
    Each pair of adjacent first and second filter pixels, a transition zone whose minimum dimension between the first filter pixel and the second filter pixel of said pair, perpendicular to the stacking direction, is less than 500 nm,
    25 and in which the pixelated interference filter comprises first and second opposite faces, the first face being in contact with the support and the second face being substantially planar.
    [2" id="c-fr-0002]
    2. Pixelated interference filter according to claim 1, wherein each first interference filter (IRCUT) comprises alternating, first dielectric layers (42) of a first dielectric material having a first refractive index in the visible range and second dielectric layers (44) of a second dielectric material having a
    B16955 - DD18653 JB second index of refraction in the visible range strictly lower than the first index of refraction and in which each second interference filter (IRBP) comprises an alternation of third dielectric layers (50) of a third dielectric material having a third index refraction in the infrared range and fourth dielectric layers (52) of a fourth dielectric material having a fourth index of refraction in the infrared range strictly lower than the third index of refraction; or in which each first interference filter (IRCUT) comprises an alternation of the third dielectric layers and of the fourth dielectric layers and in which each second interference filter (IRBP) comprises an alternation of the first dielectric layers and of the fourth dielectric layers.
    [3" id="c-fr-0003]
    3. Pixelated interference filter according to claim 2, in which the first dielectric material can be chosen from the group comprising silicon nitride (SiN), hafnium oxide (HfO x ), aluminum oxide (A1O X ), an alloy of aluminum, oxygen and nitrogen (A10 x Ny), an alloy of silicon, oxygen, carbon and nitrogen (SiO x C y N z ), silicon nitride (SiN x ), niobium oxide (NbO x ), tantalum oxide (TaO x ), titanium oxide (TiO x ) and mixtures of at least two of these compounds.
    [4" id="c-fr-0004]
    4. Pixelated interference filter according to claim 2 or 3, wherein the second dielectric material and / or the fourth dielectric material may each be chosen from the group comprising silicon dioxide (S1O2), magnesium fluoride. (MgF2), silicon oxide (SiO x ), silicon oxynitride (S.iO x Ny), hafnium oxide (HfO x ), aluminum oxide. (A1O X ), a film based on aluminum, oxygen and nitrogen (A10 x N y ), a film based on silicon, oxygen, carbon and nitrogen (SiO x C y N z ), silicon nitride (SiN x ) and mixtures of at least two of these compounds.
    B16955 - DD18653 JB
    [5" id="c-fr-0005]
    5. Pixelated interference filter according to any one of claims 2 to 4, in which the third dielectric material can be chosen from the group comprising amorphous silicon (aSi), hydrogenated amorphous silicon (aSiH) and mixtures of these compounds.
    [6" id="c-fr-0006]
    6. Image sensor (30; 80; 85; 90; 95; 100; 105; 110; 115) comprising a support (32) and the pixelated interference filter (36) according to any one of claims 1 to 5 resting on the support.
    [7" id="c-fr-0007]
    7. An image sensor according to claim 6, further comprising an antireflection layer (34) between the support (32) and the pixelated interference filter (36).
    [8" id="c-fr-0008]
    8. An image sensor according to claim 6 or 7, comprising, for each first pixel filter (PFtrcüt) e t overlying said first filter pixel, at least one color filter (R) adapted to allow only visible light to pass in a first range of wavelengths and a color filter (G) adapted to allow visible light to pass only in a second range of wavelengths different from the first range.
    [9" id="c-fr-0009]
    9. An image sensor according to claim 8, comprising, for each color filter (R) of each first filter pixel (PF ^ pqu ^), a first lens (38) covering said color filter, and comprising, for each second filter pixel (PHjrbp), a second lens covering the second filter pixel.
    [10" id="c-fr-0010]
    10. Method for manufacturing a pixelated interference filter (36) according to any one of claims 1 to 5, comprising the following successive steps:
    a) depositing, on a substrate (32), a first stack. (58) dielectric layers having the structure of the first interference filters (IRCUT);
    b) etching the first stack to remove the first stack at the locations of the second pixels of
    B16955 - DD18653 JB filters (PFjRgp) and keep the first interference filters at the locations of the first filter pixels (PFjrcut) '
    c) depositing a first insulating layer (60), having a thickness greater than the thickness of the first stack, on the
    First 5 interference filters and between the first interference filters;
    d) etching of at least part of the first insulating layer on the first interference filters;
    e) depositing a second stack (62) of dielectric layers having the structure of second interference filters (IRBP);
    f) etching the second stack to remove the second stack at the locations of the first filter pixels and keep the second interference filters at
    15 locations of the second filter pixels;
    g) depositing a second insulating layer (64), having a thickness greater than the thickness of the. second stack, on the second interference filters and between the second interference filters; and
    20 h) etching of at least part of the second insulating layer on the second interference filters.
    [11" id="c-fr-0011]
    11. The method of claim 10, wherein, in step a), the first stack (58) is deposited on a support (32) comprising at least one raised area (70), the method
    25 comprising, in step b), the etching of the part of the first stack covering the raised area.
    [12" id="c-fr-0012]
    12. The method of claim 10 or 11, wherein the etching of the first insulating layer (60) and / or the second insulating layer (64) comprises a step of mechanical polishing
    30 chemistry.
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    同族专利:
    公开号 | 公开日
    EP3579028A1|2019-12-11|
    US20190377109A1|2019-12-12|
    FR3082322B1|2020-07-31|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    WO2012004934A1|2010-07-08|2012-01-12|パナソニック株式会社|Solid state imaging device|
    US20150212245A1|2014-01-29|2015-07-30|Canon Kabushiki Kaisha|Optical filter and optical apparatus|
    WO2015195123A1|2014-06-18|2015-12-23|Jds Uniphase Corporation|Metal-dielectric optical filter, sensor device, and fabrication method|FR3112425A1|2020-07-10|2022-01-14|Commissariat A L'energie Atomique Et Aux Energies Alternatives|Image sensors comprising an array of interference filters|
    US11143803B2|2018-07-30|2021-10-12|Viavi Solutions Inc.|Multispectral filter|
    FR3111421A1|2020-06-11|2021-12-17|Commissariat A L'energie Atomique Et Aux Energies Alternatives|Depth chart sensor|
    FR3112426A1|2020-07-10|2022-01-14|Commissariat A L'energie Atomique Et Aux Energies Alternatives|Image sensors comprising an array of interference filters|
    法律状态:
    2019-06-28| PLFP| Fee payment|Year of fee payment: 2 |
    2019-12-13| PLSC| Search report ready|Effective date: 20191213 |
    2020-06-30| PLFP| Fee payment|Year of fee payment: 3 |
    2021-06-30| PLFP| Fee payment|Year of fee payment: 4 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1800585|2018-06-08|
    FR1800585A|FR3082322B1|2018-06-08|2018-06-08|IMAGE SENSORS INCLUDING AN INTERFERENTIAL FILTER MATRIX|FR1800585A| FR3082322B1|2018-06-08|2018-06-08|IMAGE SENSORS INCLUDING AN INTERFERENTIAL FILTER MATRIX|
    EP19178271.3A| EP3579028A1|2018-06-08|2019-06-04|Image sensors comprising a matrix of interferential filters|
    US16/434,104| US20190377109A1|2018-06-08|2019-06-06|Image sensor comprising an array of interference filters|
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